Unitized Semiconductor NSN: 5961-01-105-8549 P/N: 7117334-1
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Unitized Semiconductor- Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. excludes devices having one or more components other than semiconductor devices. the individually distinct devices forming the unit may be internally connected. the unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. it may include or consist of inseparable matched pairs. may or may not include mounting hardware and/or heatsink. for interconnected items arranged in stack(s), see rectifier, semiconductor device. for items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. do not use if more specific name applies.
|Component Name And Quantity:||4 transistor|
|Current Rating Per Characteristic:||1.50 amperes source cutoff current maximum all transistor|
|Features Provided:||Hermetically sealed case|
|Maximum Operating Temp Per Measurement Point:||200.0 deg celsius junction|
|Mounting Method:||Press fit|
|Overall Height:||0.325 inches nominal|
|Overall Length:||0.660 inches minimum and 0.785 inches maximum|
|Semiconductor Material:||Silicon all transistor|
|Overall Width:||0.325 inches maximum|
|Special Features:||All transistor junction pattern arrangement: npn|
|Voltage Rating In Volts Per Characteristic:||70.0 maximum collector to base voltage, dc all transistor and 445.0 maximum collector to emitter voltage, dc all transistor and 6.0 maximum emitter to base voltage, dc all transistor|
|Terminal Type And Quantity:||14 ribbon|
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