Transistor NSN: 5961-00-062-1594 P/N: 2N3576
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Transistor- An active semiconductor device with three or more electrodes. may or may not include mounting hardware and/or heatsink. excludes semiconductor device, diode and semiconductor device, thyristor. for solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
| Electrode Internally-electrically Connected To Case: | Collector |
| Current Rating Per Characteristic: | 200.00 milliamperes source cutoff current maximum |
| Features Provided: | Hermetically sealed case |
| Mounting Method: | Terminal |
| Overall Diameter: | 0.220 inches nominal |
| Overall Length: | 0.188 inches nominal |
| Semiconductor Material: | Silicon |
| Inclosure Material: | Metal |
| Internal Configuration: | Junction contact |
| Power Rating Per Characteristic: | 360.0 milliwatts small-signal input power, common-collector minimum |
| Special Features: | Junction pattern arrangement: pnp |
| Specification/standard Data: | 80131-release4793 government specification |
| Terminal Circle Diameter: | 0.100 inches nominal |
| Terminal Length: | 0.500 inches minimum |
| Terminal Type And Quantity: | 3 uninsulated wire lead |
| Voltage Rating In Volts Per Characteristic: | 20.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open |
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